In the fast-evolving world of 5G telecommunications, the demand for compact, efficient, and high-performance RF power amplifiers is at an all-time high. Holto’s H9G4750M12P LDMOS MMIC Amplifier rises to this challenge,delivering a robust solution for small cell and mMIMO (massive Multiple Input Multiple Output) base stations. Built on Holto’s proprietary LDMOS MMIC technology, this amplifier combines exceptional efficiency, high gain, and seamless integration in a compact package. Tailored for applications such as 5G NR FR1 n79, small cell power amplification, and mMIMO driver stages, the H9G4750M12P enables telecommunications providers to build reliable, high-capacity networks that meet the evolving needs of mobile infrastructure.In this blog, ANDESOURCE will explore the highlights and applications of the H9G4750M12P, showcasing its role in advancing 5G connectivity.
Key Specifications at A Glance
The H9G4750M12P is a high-performance LDMOS MMIC Integrated Asymmetrical Doherty amplifier optimized for 5G applications. Here are its core specifications:
H9G4750M12P Key Specifications | |
Min.Freq.(GHz) | 4.7 |
Max.Freq.(GHz) | 5.0 |
VDD(V) | 28 |
Psat(W) | 12 |
Pavg (dBm) | 32 |
EFF (%, @4.8GHz,WCDMA) | 29.1 |
Gain (dB, @4.8GHz,WCDMA) | 34 |
Input/Output Matching | 50 Ω |
ACPR | -29.9 dBc at 5 MHz offset, -41.3 dBc at 10 MHz offset (4.8 GHz, WCDMA, uncorrected DPD). |
Package | LGA 7X7 mm |
Process | LDMOS |
These specifications highlight the H9G4750M12P’s ability to deliver high power and efficiency in a compact form factor, making it a strong choice for advanced 5G infrastructure.
Product Highlights
The H9G4750M12P stands out with a comprehensive set of features that make it a leader in the RF amplifier market:
Integrated Asymmetrical Doherty Architecture: This design integrates an output combiner and 50 Ω input/output matching, achieving 29.1% efficiency at 4.8 GHz under WCDMA conditions. By reducing the need for external components, it simplifies system design and lowers integration costs for 5G applications.
High Power and Gain: With a 12 W saturated output power and a typical gain of 34 dB at 4.8 GHz (WCDMA), the H9G4750M12P minimizes the need for additional amplification stages, enhancing system efficiency and reliability.
Optimized for 5G Frequencies: Operating across the 4.7 to 5.0 GHz band, it is tailored for 3GPP 5G NR FR1 n79, ensuring compatibility with high-frequency 5G applications.
Compact 7x7 mm LGA Package: The small-footprint 20-pin LGA package facilitates integration into space-constrained 5G small cell and mMIMO systems, with the option for pin-to-pin compatibility per customer requirements for added design flexibility.
Robust Performance and Reliability: Operating at +28 Vdc, the amplifier supports a wide temperature range (-40°C to +125°C case temperature) and withstands load mismatch tests (VSWR 10:1, at all Phase Angles,Pavg = 35 dBm) without degradation, ensuring reliability in 5G environments.
RoHS and ESD Compliance: Compliant with 2011/65/EU RoHS directives, as amended by Directive 2015/863/EU, the H9G4750M12P also features ESD protection (Class 1B HBM, Class A MM, Class III CDM), enhancing reliability during manufacturing and operation.
These features collectively position the H9G4750M12P as a high-performance, cost-effective solution for 5G infrastructure, delivering power, efficiency, and ease of integration.
Application Analysis
The H9G4750M12P is engineered to address the specific needs of 5G applications, tackling key challenges in telecommunications. These applications include:
3GPP 5G NR FR1 n79: Operating in the 4.7 to 5.0 GHz band, the H9G4750M12P is ideal for 5G NR FR1 n79 small cell deployments, delivering high efficiency and linearity to support high-data-rate indoor and urban environments.
Power Amplifier for Small Cells: The compact 7x7 mm LGA package and 50 Ω matching make it perfect for small cell base stations, enabling quick deployment and easy installation in space-limited settings, such as indoor coverage solutions for high-traffic areas.
Driver Amplifier for Micro and Macro Base Stations: With a high gain of 34 dB and 12 W saturated output power, the H9G4750M12P serves as an effective driver amplifier, supporting both micro and macro base stations to enhance network capacity and coverage.
Active Antenna Array for 5G mMIMO: The amplifier’s high power and efficiency make it an excellent choice for driving active antenna arrays in mMIMO systems, which are critical for achieving massive connectivity and high throughput in 5G networks.
Repeaters/DAS: The H9G4750M12P’s robust performance under varying load conditions (VSWR 10:1) ensures reliable signal amplification in repeaters and Distributed Antenna Systems (DAS), improving coverage in challenging environments.
Mobile Infrastructure: Its wide frequency coverage and high linearity (ACPR of -29.9 dBc at 5 MHz offset) make it a versatile solution for mobile infrastructure, supporting operators in optimizing network performance.
Achieve Exceptional Value and Performance with HOLTO RF Solutions from ANDESOURCE
ANDESOURCE’s HOLTO RF chips deliver remarkable cost savings—cutting expenses by more than 50% compared to premium alternatives—without compromising on quality. You’ll benefit from industry-leading reliability, thorough quality control, and direct original factory debugging support.
Go beyond the H9G4750M12P—explore the entire HOLTO range to find RF components perfectly matched to your application requirements.
Contact us today for a quote and see how HOLTO RF chips can power your innovation.
Explore the complete HOLTO series here.
